发明名称 PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32. The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47. The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.
申请公布号 US2012160809(A1) 申请公布日期 2012.06.28
申请号 US201013391310 申请日期 2010.08.16
申请人 ISHIBASHI KIYOTAKA;MORITA OSAMU;TOKYO ELECTRON LIMITED 发明人 ISHIBASHI KIYOTAKA;MORITA OSAMU
分类号 B44C1/22;C23C16/511;H01L21/3065;H05H1/46 主分类号 B44C1/22
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