<p>A high-temperature valve device (40, 140), which can be positioned under a reactor (10) for generating silicon, is provided with: a first tube-shaped member (50) connected to the interior space of the reactor, and capable of introducing silicon generated in the reactor; a valve (64) positioned in the first tube-shaped member; and a heater (100) capable of heating a heating region including the valve and part of the first tube-shaped member from the reactor to the valve to a temperature greater than or equal to the boiling point of the related substances pertaining to the generation of silicon in the reactor.</p>
