| 发明名称 |
METHOD OF MANUFACTURING ZnO BASED SEMICONDUCTOR LAYER, AND METHOD OF MANUFACTURING ZnO BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel method of manufacturing a ZnO based semiconductor layer. <P>SOLUTION: The method of manufacturing a ZnO based semiconductor layer includes (a) a step for growing an (Mg<SB POS="POST">x</SB>Zn<SB POS="POST">1-x</SB>)<SB POS="POST">3</SB>N<SB POS="POST">2</SB>(0≤x≤0.6) single crystal film above a substrate, (b) a step for oxidizing the (Mg<SB POS="POST">x</SB>Zn<SB POS="POST">1-x</SB>)<SB POS="POST">3</SB>N<SB POS="POST">2</SB>(0≤x≤0.6) single crystal film at 400°C or lower by active oxygen to form an Mg<SB POS="POST">y</SB>Zn<SB POS="POST">1-y</SB>O(0≤y≤0.6) single crystal film, and (c) a step for laminating the Mg<SB POS="POST">y</SB>Zn<SB POS="POST">1-y</SB>O(0≤y≤0.6) single crystal film by repeating the steps (a) and (b). <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012124431(A) |
申请公布日期 |
2012.06.28 |
| 申请号 |
JP20100276133 |
申请日期 |
2010.12.10 |
| 申请人 |
STANLEY ELECTRIC CO LTD |
发明人 |
KYOYA CHIZU;KATO HIROYUKI |
| 分类号 |
H01L21/203;C23C14/08;H01L21/205;H01L33/28 |
主分类号 |
H01L21/203 |
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