METHOD AND DEVICE FOR DEPOSITING SILICON ON A SUBSTRATE

摘要

The invention relates to a method for depositing silicon on a substrate (32) using a focused beam of charged particles (14). A precursor (20) containing silicon is provided, said precursor being dissociated by the beam (14) in the immediate vicinity of the substrate (32). The aim of the invention is to allow the deposition of silicon on a substrate (32) in a particularly effective, material-protecting, and precise manner. For this purpose, a polysilane is used as the precursor (20).