| 摘要 |
Within a temperature range under which there is no degradation of other films adjacent to a metal nitride film, the amount of chlorine atoms in the metal nitride film and naturally oxidized film formed on the surface of the metal nitride film is reduced, the properties of the metal nitride film are improved, and oxidation resistance is improved. The substrate treatment device comprises: a treatment chamber to which is conveyed a substrate covered by a chlorine atom-containing metal nitride film and, on top thereof, a naturally oxidized film; a substrate support part for supporting the substrate inside the treatment chamber, where the substrate is heated; a gas feed part for feeding nitrogen atom-containing gas and/or hydrogen atom-containing gas to the inside of the treatment chamber; a gas evacuation part for evacuating the inside of the treatment chamber; a plasma-generating part for exciting the nitrogen atom-containing gas; and a hydrogen atom-containing gas fed to the inside of the treatment chamber; and a control part for controlling the substrate support part, gas feed part, and plasma generating part. |
