发明名称 LEVEL SHIFT CIRCUIT AND DRIVE CIRCUIT HAVING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a level shift circuit that can easily convert a low amplitude signal into a high amplitude signal. <P>SOLUTION: The level shift circuit includes: NMOS transistors M1, M2 connected between a power terminal E1 and output nodes 3, 4, respectively, and receiving low amplitude input signals at control terminals, respectively; PMOS transistors M3, M4 connected between a power terminal E2 and the output nodes 3, 4, respectively; a PMOS transistor M5 connected between a gate of the PMOS transistor M3 and the output node 4 and connected at a gate to the output node 3; a PMOS transistor M6 connected between a gate of the PMOS transistor M4 and the output node 3 and connected at a gate to the output node 4; a load element 11 operative to change a gate voltage in a direction to turn off the PMOS transistor M3; and a load element 12 operative to change a gate voltage in a direction to turn off the PMOS transistor M4. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012124701(A) 申请公布日期 2012.06.28
申请号 JP20100273562 申请日期 2010.12.08
申请人 RENESAS ELECTRONICS CORP 发明人 TSUCHI HIROSHI
分类号 H03K19/0185;G02F1/133;G09G3/20;G09G3/30;G09G3/36;H01L51/50 主分类号 H03K19/0185
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