发明名称 GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME
摘要 <p>PURPOSE: A graphene electronic device and a manufacturing method thereof are provided to maintain a property of a graphene channel layer without damage by forming gate oxide, in other word, a protective layer on graphene. CONSTITUTION: A graphene channel layer is arranged on the top of a substrate. A source electrode(130) and a drain electrode(140) are formed on both ends of a graphene channel layer(120). A gate oxide(150) is formed between the source electrode and the drain electrode on the graphene channel layer. The gate electrode is arranged on the gate oxide. The gate oxide is formed to be substantially identical to a shape of a channel layer between the source electrode and the drain electrode.</p>
申请公布号 KR20120068390(A) 申请公布日期 2012.06.27
申请号 KR20100129995 申请日期 2010.12.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUNG, HYUN JONG;HEO, JIN SEONG;YANG, HEE JUN;SEO, SUN AE;LEE, SUNG HOON
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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