| 摘要 |
PURPOSE: A semiconductor memory device is provided to maintain data for a long time without power by turning off a selection transistor formed in a channel region by an oxide semiconductor. CONSTITUTION: A memory cell array includes a plurality of memory cells(20) which are arranged with a matrix shape. The memory cells include a first transistor(21) including a channel region. A decoder is operatively connected to the plurality of the memory cells. A first circuit is operatively connected to the decoder and includes a first device, a second device, a third device, a first line, a second line, a third line, and a fourth line. Each memory cell maintains data by turning off the first transistor. |
