PHOTOENERGY CONVERSION MATERIAL USING TERNARY HYBRID SEMICONDUCTOR COMPOSITE AND METHOD OF PREPARING TERNARY SAME

摘要

PURPOSE: A photo conversion material and a manufacturing method thereof are provided to offer a semiconductor composite which includes ternary system hybrid material of CdS-TiO2-WO3. CONSTITUTION: A semiconductor composite comprises ternary system hybrid material of CdS-TiO2-WO3. An atomic ratio of Cd, Ti, and W of the semiconductor composite is 4 : 1 : 1 to 0.25 : 1 : 1. An optical band gap of the semiconductor composite is from 2.3eV to 2.5eV. The semiconductor composite has an absorption edge of 490nm to 550nm. The semiconductor composite is a crystalline structure.