METHOD FOR FABRICATING STORAGE NODE OF CAPACITOR AND SEMICONDUCTOR INCLUDING THE SAME

摘要

PURPOSE: A semiconductor device and a method for forming a storage node of a capacitor are provided to control the increase of capacitance of a bit line by preventing a short circuit between a bit line and a guard. CONSTITUTION: An insulating layer(120) is formed on a semiconductor substrate(100) including a cell region, a peripheral region, and a border region. A storage node connection contact connected to the cell region of the semiconductor substrate by passing through the insulating layer is formed. A mold layer(150) is formed on the storage node connection contact and the insulating layer. A first opening unit exposing the storage node connection contact is formed. A second opening unit exposing the insulating layer is formed. Storage nodes are connected with the storage node connection contact. A guard(220) is composed of a same material layer with the storage nodes.