发明名称 |
System and method to control a direction of a current applied to a magnetic tunnel junction |
摘要 |
A system and method to control a direction of a current applied to a magnetic tunnel junction is disclosed. In a particular embodiment, an apparatus comprises a magnetic tunnel junction (MTJ) storage element and a sense amplifier. The sense amplifier is coupled to a first path and to a second path. The first path includes a first current direction selecting transistor and the second path includes a second current direction selecting transistor. The first path is coupled to a bit line of the MTJ storage element and the second path is coupled to a source line of the MTJ storage element. |
申请公布号 |
US8208291(B2) |
申请公布日期 |
2012.06.26 |
申请号 |
US20100687310 |
申请日期 |
2010.01.14 |
申请人 |
KIM JUNG PILL;RAO HARI M.;LEE KANGHO;QUALCOMM INCORPORATED |
发明人 |
KIM JUNG PILL;RAO HARI M.;LEE KANGHO |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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