发明名称 |
REPAIR METHOD OF MEMORY DEVICE |
摘要 |
PURPOSE: A method for repairing a memory device is provided to increase a repair speed by simultaneously repairing two or more memory devices with the same address as a defective memory cell. CONSTITUTION: A plurality of memory devices are tested and an address of a defective memory cell is detected(S201). Two or more memory devices with the same address are checked(S202). The same address is recorded in two or more memory devices as a defective address(S203). |
申请公布号 |
KR20120067507(A) |
申请公布日期 |
2012.06.26 |
申请号 |
KR20100128938 |
申请日期 |
2010.12.16 |
申请人 |
SK HYNIX INC. |
发明人 |
CHO, HYUNG JUN;JUNG, CHOONG MAN |
分类号 |
G11C29/18;G11C29/44 |
主分类号 |
G11C29/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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