发明名称 REPAIR METHOD OF MEMORY DEVICE
摘要 PURPOSE: A method for repairing a memory device is provided to increase a repair speed by simultaneously repairing two or more memory devices with the same address as a defective memory cell. CONSTITUTION: A plurality of memory devices are tested and an address of a defective memory cell is detected(S201). Two or more memory devices with the same address are checked(S202). The same address is recorded in two or more memory devices as a defective address(S203).
申请公布号 KR20120067507(A) 申请公布日期 2012.06.26
申请号 KR20100128938 申请日期 2010.12.16
申请人 SK HYNIX INC. 发明人 CHO, HYUNG JUN;JUNG, CHOONG MAN
分类号 G11C29/18;G11C29/44 主分类号 G11C29/18
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