发明名称 HIGH-VOLTAGE TRANSISTOR DEVICE WITH INTEGRATED RESISTOR
摘要 A high-voltage device structure comprises a resistor coupled to a tap transistor that includes a JFET in a configuration wherein a voltage provided at a terminal of the JFET is substantially proportional to an external voltage when the external voltage is less than a pinch-off voltage of the JFET. The voltage provided at the terminal being substantially constant when the external voltage is greater than the pinch-off voltage. One end of the resistor is substantially at the external voltage when the external voltage is greater than the pinch-off voltage. When the external voltage is negative, the resistor limits current injected into the substrate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.
申请公布号 KR101157759(B1) 申请公布日期 2012.06.25
申请号 KR20100079694 申请日期 2010.08.18
申请人 发明人
分类号 H01L21/331;H01L29/737 主分类号 H01L21/331
代理机构 代理人
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