发明名称 APPARATUS FOR CHEMICAL VAPOR DEPOSITION
摘要 PURPOSE: A chemical vapor deposition apparatus is provided to reduce a failure rate in a process by accurately controlling the heating temperature of a susceptor since foreign materials are prevented from deposited on a heating coil and a sensor. CONSTITUTION: A shower head(130) uniformly sprays a gas provided from a gas supply part(140) to the inside of a chamber(110). A susceptor(150) comprises a substrate support plate(151) supporting a substrate(10), a sidewall(152), and a sidewall supporting plate(153). The susceptor is supported by a rotary shaft(160). A heater(170) comprises a heating coil(171), a heat sink(172), and a power block(173). A liner(111) is installed between an inner wall of the chamber and an outer sidewall of the susceptor.
申请公布号 KR20120067041(A) 申请公布日期 2012.06.25
申请号 KR20100128438 申请日期 2010.12.15
申请人 LIGADP CO., LTD. 发明人 LEE, CHANG YEOB;JEONG, JIN YEOL
分类号 H01L21/205;C23C16/44;C23C16/455;C23C16/458 主分类号 H01L21/205
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