发明名称 POWER SOURCE SWITCHING CIRCUIT
摘要 <p>In a power supply switching circuit, a transistor that switches to a highest voltage is formed of an enhancement type PMOS transistor, and transistors that switch other voltages are each formed of a depletion type NMOS transistor. A signal for controlling a gate of each of the transistors is input through a level shifter. The depletion type NMOS transistor does not operate in a bipolar manner even if a source voltage thereof reaches a power supply voltage VPP1 or VPP2, and the enhancement type PMOS transistor does not operate in the bipolar manner even if a gate voltage and a source voltage thereof reach the power supply voltage VPP1, and a drain voltage thereof reaches the power supply voltage VPP2. Accordingly, there can be provided the power supply voltage switching circuit that is high in efficiency.</p>
申请公布号 KR101157850(B1) 申请公布日期 2012.06.22
申请号 KR20080123333 申请日期 2008.12.05
申请人 发明人
分类号 G11C16/30;G11C5/14 主分类号 G11C16/30
代理机构 代理人
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