| 摘要 |
A base substrate for gallium nitride, a method for manufacturing a base substrate and a method for growing the gallium nitride are provided to improve yield and productivity of the gallium nitride wafer with high quality by preventing a warpage and a crack when growing the gallium nitride with a large area. At least one cut line(115) is formed in a base substrate(110) for growing the gallium nitride. The base substrate is divided into two parts or more. The cut line includes the oxide or nitride along the cut line. The oxide is SiO2 or ZnO. The nitride is SiN or Si3N4. A support substrate is included in one side of the base substrate to prevent each part of the base substrate from being separated. The oxide or nitride is formed along the cut line with a stripe pattern. A diameter of the base substrate is 1 inch or more. |
