TUNNELING FIELD EFFECT TRANSISTOR WITH ASYMMETRICAL ACTIVE REGION

摘要

PURPOSE: A tunneling field effect transistor with an asymmetrical active region is provided to increase a tunneling current in a turn-on state and maximally suppress a leakage current in a turn-off state. CONSTITUTION: A gate(40) is formed on a semiconductor substrate while interposing a gate insulation layer(32). An active region includes a P+ region(22), a channel region(20a), and an N+ region(24). The channel region is formed on a buried oxide layer(10). The channel region forms an N channel TFET. The P+ region and the N+ region are formed on the semiconductor substrate while interposing the channel region.