| 发明名称 |
FLEXIBLE SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a flexible substrate for a semiconductor device, which has high bendability despite having a metal layer for improving heat dissipation. <P>SOLUTION: The flexible substrate for a semiconductor device comprises: an insulating base film substrate 2; a wiring pattern 3 formed on a surface of the insulating base film substrate; an insulating protective film 4 covering a surface of the wiring pattern; an adhesive layer 5 formed on the insulating protective film; and a metal layer 6 adhered to the insulating protective film by the adhesive layer. The flexible substrate for a semiconductor device is characterized in that an elastic modulus of the adhesive layer is 1.0 MPa or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012119563(A) |
申请公布日期 |
2012.06.21 |
| 申请号 |
JP20100269215 |
申请日期 |
2010.12.02 |
| 申请人 |
MITSUI MINING & SMELTING CO LTD |
发明人 |
HIRANO YOKO;IDE SHINGO;MATSUMURA YASUNORI |
| 分类号 |
H01L21/60;H01L23/12 |
主分类号 |
H01L21/60 |
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