发明名称 |
CERAMIC VIA SUBSTRATE, METALLIZED CERAMIC VIA SUBSTRATE, AND METHOD FOR MANUFACTURING BOTH |
摘要 |
<p>A ceramic via substrate formed by forming conductive via structures in a sintered ceramic substrate, wherein the conductive via structures are formed by tightly filling through-holes with a conductive metal that contains a metal (A) with a melting point of 600 - 1100°C, a metal (B) with a melting point higher than the metal (A), and an active metal, and an active layer is formed at the interface between the conductive via structures and the sintered ceramic substrate. As a result, a ceramic via substrate can be produced by a simple method.</p> |
申请公布号 |
WO2012081425(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
WO2011JP77966 |
申请日期 |
2011.12.02 |
申请人 |
TOKUYAMA CORPORATION;TAKAHASHI, NAOTO;YAMAMOTO, YASUYUKI |
发明人 |
TAKAHASHI, NAOTO;YAMAMOTO, YASUYUKI |
分类号 |
H01L23/12;H01L23/15;H05K1/09;H05K1/11;H05K3/40 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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