| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element that is free from Cd and has high photoelectric conversion efficiency. <P>SOLUTION: A photoelectric conversion element has: a light absorption layer that is provided on a lower electrode layer and contains Cu, a group III-B element, and a group VI-B element; and a semiconductor layer that is provided above the light absorption layer and contains a group II-VI compound or a group III-VI compound. Conductors containing at least one of an Ag element and a Pt element are scattered above the light absorption layer. The photoelectric conversion element further has a conductive layer containing at least one of the Ag element and the Pt element on the light absorption layer at the semiconductor layer side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
