| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a radical cleaning method which removes a SiO<SB POS="POST">2</SB>film formed on a Si substrate and which is capable of also removing a residual product reattached to a reaction chamber (vacuum chamber) when residual products such as (NH<SB POS="POST">4</SB>)<SB POS="POST">2</SB>SiF<SB POS="POST">6</SB>attached to the Si substrate is removed. <P>SOLUTION: A radical cleaning method comprises: a NFH radical generation step of generating a H radical by decomposing a gas for H radical generation with plasma and generating a radical composed of N, F, and H by reacting this H radical with a NF<SB POS="POST">3</SB>gas; an etching step of removing the SiO<SB POS="POST">2</SB>film by irradiating the SiO<SB POS="POST">2</SB>film formed on a Si substrate with the radical composed of N, F, and H in the vacuum chamber; a first residual product removal step of removing the residual product generated on the Si substrate in the etching step from the Si substrate by heating and evaporating the residual product in the vacuum chamber; and a second residual product removal step of sublimating and removing the residual product attached to the vacuum chamber as a result of performing the first residual product removal step by irradiating the residual product attached to the vacuum chamber with a microwave. <P>COPYRIGHT: (C)2012,JPO&INPIT |
