SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To achieve three-dimensional integration and to improve the coupling ratio between a control gate electrode and a floating gate electrode while suppressing an increase in the number of steps.

SOLUTION: A semiconductor memory comprises: a columnar semiconductor 10; a floating gate electrode 8 formed on the side surface of the columnar semiconductor 10 via a tunnel insulating film 9; and control gate electrode 2, 3', and 4 formed via a blocking insulating film 7 so as to surround the floating gate electrode 8.

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