| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing its area without increasing variation in characteristics of an MIS transistor. <P>SOLUTION: A semiconductor device comprises: a first active region 1a surrounded by first element isolation regions 2a in a semiconductor substrate 1; a first MIS transistor 34 having a first gate insulating film 6a and a first gate electrode 9a that are sequentially stacked on the first active region; a second active region 1b surrounded by second element isolation regions 2b in the semiconductor substrate 1; and a second MIS transistor 32 having a second gate insulating film 6b and a second gate electrode 9b that are sequentially stacked on the second active region. The first gate electrode 9a is formed not only on the top surface but also on the side surfaces of the first active region 1a via the first gate insulating film 6a. The second gate electrode 9b is formed on the top surface but not on the side surfaces of the second active region 1b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
