发明名称 |
METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES |
摘要 |
A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
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申请公布号 |
US2012153343(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US201213406251 |
申请日期 |
2012.02.27 |
申请人 |
EMERSON DAVID TODD;HABERERN KEVIN;BERGMANN MICHAEL JOHN;SLATER, JR. DAVID B.;DONOFRIO MATTHEW;EDMOND JOHN;CREE, INC. |
发明人 |
EMERSON DAVID TODD;HABERERN KEVIN;BERGMANN MICHAEL JOHN;SLATER, JR. DAVID B.;DONOFRIO MATTHEW;EDMOND JOHN |
分类号 |
H01L33/48;H01L33/14;H01L33/36;H01L33/38 |
主分类号 |
H01L33/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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