| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which suppresses the generation of a void between substrates. <P>SOLUTION: The method for manufacturing a semiconductor device comprises the steps of: preparing a first substrate 10 and a second substrate each having a bump electrode group 12 consisting of bump electrodes 14 arranged with a fixed pitch provided that the number of bump electrodes arrayed along a second direction T2 is smaller than the number of bump electrodes arrayed along a first direction T1; bonding the first substrate 10 with the second substrate through the bump electrodes 14 so that a gap is formed between the first substrate 10 and the second substrate; and causing a sealing resin 34 to flow along the second direction T2 of the bump electrode group 12 in the gap between the first substrate 10 and the second substrate, thereby filling the gap with the sealing resin 34. <P>COPYRIGHT: (C)2012,JPO&INPIT |
