发明名称 Power Transistor Output Match Network with High Q RF Path and Low Q Low Frequency Path
摘要 A power circuit includes a power device, an output match network and a bypass network. The output match network is coupled to an output of the power device and includes a blocking capacitor which forms part of a high quality factor RF path of the output match network. The output match network is operable to provide a range of impedance matching over a signal bandwidth and a low frequency gain peak outside the signal bandwidth which corresponds to a low frequency resonance of the high quality factor RF path. The bypass network is coupled in parallel with the blocking capacitor of the output match network. The bypass network is operable to attenuate the low frequency gain peak while maintaining the high quality factor RF path.
申请公布号 US2012154053(A1) 申请公布日期 2012.06.21
申请号 US20100973613 申请日期 2010.12.20
申请人 INFINEON TECHNOLOGIES NORTH AMERICA 发明人 BLAIR CYNTHIA
分类号 H03G3/30;H05K3/30 主分类号 H03G3/30
代理机构 代理人
主权项
地址