| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an electron emitting element capable of stably obtaining desired electron emission characteristics. <P>SOLUTION: The method for manufacturing an electron emitting element includes a first step (d) and a second step (e). In the first step, a structure 60 including a laminated structure 40b and a metal film 50 is heated to convert an interface between a first layer 10b and the metal film 50 into a silicide. The laminated structure includes the first layer 10b comprising silicon, a second layer 20b comprising an insulator, and a third layer 30b comprising a non-insulator, which are laminated in the order, and has a continuous surface 403b including each of side faces (103b, 203b, 303b) of the first to third layers. The metal film is provided to cover the continuous surface 403b to form an interface with the first to third layers and comprises a metal material that can be converted into a silicide. In the second step, a part of the metal film 50 is removed using an etchant having an etching rate to the metal material higher than that to the silicide of the metal material so that the side face 203b of the second layer 20b is exposed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
