MULTILAYER PHASE CHANGE MATERIAL WITH LOW THERMAL CONDUCTIVITY

摘要

A multilayer phase change material with low thermal conductivity is provided. The periodic multilayer film structure is formed by alternately stacking two kinds of single layer film phase change materials which are different from at least a constituent element, or different from atom percentage with completely the same constituent element. As the recording material used in the phase change memory, the multilayer phase change materials can effectively lower the temperature rise in neighboring memory cell caused by reading and writing operations on a certain memory cell, decrease thermal interference between the neighboring cells, improve reliability of the memory, and reduce device power consumption. Furthermore, there is no need to introduce other non-phase change material for the multilayer phase change materials which is compatible with the existing fabrication techniques.