| 摘要 |
Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate (10) comprising a first isolation region (12) separated from a second isolation region by an active region (11) comprising a collector impurity; forming a layer stack over said substrate, said layer stack comprising a base layer (14, 14'), an etch protection portion (30, 32, 34) covering the base layer over the active region, a polysilicon layer (16) over said base layer and etch protection portion and an insulating layer (18) over the polysilicon layer; forming a emitter window (40) in said layer stack, said emitter window exposing at least part of said active region; oxidizing the exposed regions (16') of the polysilicon layer in the emitter window; removing the etch protection portion; forming sidewall spacers (22) in the base window; and filling the base window with an emitter material (24). A bipolar transistor manufactured in accordance with this method is also disclosed.
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