METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATE

摘要

PURPOSE: A method for manufacturing a semiconductor device equipped with a buried gate is provided to improve process margin of a bit line formation process by forming a bit line in a cell area before forming a peripheral gate. CONSTITUTION: A first interlayer insulating film(42) is formed on a substrate(31). A storage node contact hole(43) is formed by selectively etching the first interlayer insulating film. A storage node contact plug(44) is formed by burying the storage node contact hole with conductive material. A damascene pattern(45) is formed by selectively etching the first interlayer insulating film of a cell area. A bit line(47) is formed inside the damascene pattern. A bit line spacer is formed on a sidewall of the damascene pattern before forming the bit line. A peripheral gate is formed in a peripheral area.