发明名称 METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING GANG BONDING AND SEMICONDUCTOR DEVICE FABRICATED BY THE SAME
摘要 PURPOSE: A method for fabricating a semiconductor device and a semiconductor device fabricated by the same are provided to prevent the disconnection of a wire by electrically connecting a plurality of semiconductor stacked structures to lead electrodes. CONSTITUTION: A member(50) has a first lead electrode(53a) and a second lead electrode(53b). A semiconductor stacked structure(30) is arranged on the member. The semiconductor laminate structure has a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region. The active region is interposed between the first conductive semiconductor layer and the second conductive semiconductor layer. A plating layer combines the semiconductor stacked structure with the member.
申请公布号 KR20120064943(A) 申请公布日期 2012.06.20
申请号 KR20100126218 申请日期 2010.12.10
申请人 LEE, CHUNG HOON;NAM, KI BUM;KAL, DAE SUNG 发明人 LEE, CHUNG HOON;KAL, DAE SUNG;NAM, KI BUM
分类号 H01L21/58;H01L21/78 主分类号 H01L21/58
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