Flux programmed multi-bit magnetic memory

摘要

An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.