发明名称 |
III-V light emitting device including a light extracting structure |
摘要 |
Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer. |
申请公布号 |
US8203153(B2) |
申请公布日期 |
2012.06.19 |
申请号 |
US20100688209 |
申请日期 |
2010.01.15 |
申请人 |
DAVID AURELIEN J. F.;KRAMES MICHAEL R.;MCLAURIN MELVIN B.;KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS LUMILEDS LIGHTINGCOMPANY, LLC |
发明人 |
DAVID AURELIEN J. F.;KRAMES MICHAEL R.;MCLAURIN MELVIN B. |
分类号 |
H01L31/12;H01L33/00 |
主分类号 |
H01L31/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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