| 摘要 |
PURPOSE: A nonvolatile memory device and a sensing method thereof are provided to prevent a data fail by using a timing sensing method in a read operation of a nonvolatile memory. CONSTITUTION: A cell array includes one or more unit cells and reads or writes data. A sensing unit includes a current-voltage converter(500) and a voltage sensing unit(600). The current-voltage converter converts a sensing current corresponding to data stored in a unit cell into a sensing voltage. A voltage sensing unit differently outputs a logic level of sensing data by determining whether the sensing voltage is larger or lower than a preset logic threshold voltage in an activation point of a sensing enable signal.
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