| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve conversion efficiency of a photoelectric conversion device. <P>SOLUTION: A manufacturing method of a photoelectric conversion device 21 comprises: a first step of forming a film in which a metallic oxide and a metal chalcogenide are mixed on an electrode layer 2; a second step of changing the film to an intermediate layer in which a metal and the metal chalcogenide are mixed by heating the film in a reductive gas atmosphere; and a third step of changing the intermediate layer to a metal chalcogenide layer as a photoelectric conversion element by heating the intermediate layer under an atmosphere containing a chalcogen element. <P>COPYRIGHT: (C)2012,JPO&INPIT |
