APPARATUS FOR PLASMA DOPING

摘要

PURPOSE: A plasma doping apparatus is provided to improve straightness of ions during a doping process by applying high frequency voltage to a susceptor. CONSTITUTION: A chamber provides a sealed process space. A susceptor(120) is located inside the chamber. A substrate is mounted on the susceptor. A shower head(130) is arranged to face the susceptor. The susceptor comprises a first cooling line(122). An insulating layer is formed on a side surface and the lower surface of the susceptor. A support part(124) is fixed on the center of the susceptor in order to control a height position of the susceptor.