发明名称 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus, capable of improving the utilizing efficiency of a target, easily adjusting the composition and the film thickness, and improving the film deposition efficiency. <P>SOLUTION: In the film deposition method, a target piece is installed on a backing plate 7 electrically connected to cathodes of a first power source 11 and a second power source 12 which can set output independently by using a sputtering apparatus 1. There are installed electrodes E<SB POS="POST">1</SB>to E<SB POS="POST">n</SB>, which are arranged in the vicinity of any one of target pieces provided to be respectively and electrically connected to anodes of the first power source 11 and the second power source 12. A workpiece W is moved along the moving path across the target pieces. The power is selectively supplied to at least any one of the electrodes E<SB POS="POST">1</SB>to E<SB POS="POST">n</SB>based on the moving position of the workpiece W. Target particles are selectively emitted from at least any one of the target pieces to perform the film deposition of the predetermined certain film constitution on a surface of the workpiece W. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012111975(A) 申请公布日期 2012.06.14
申请号 JP20100259151 申请日期 2010.11.19
申请人 OLYMPUS CORP 发明人 ISOGAWA SEIJI
分类号 C23C14/34;H01L21/285 主分类号 C23C14/34
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