| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a microcrystalline semiconductor film with high grain diameter uniformity of mixed phase grains and high crystallinity, and manufacture semiconductor devices with high electric characteristics with high productivity. <P>SOLUTION: Under a first condition for providing mixed phase grains with high grain diameter uniformity and high crystallinity at low grain density, seed crystal with the mixed phase grains including an amorphous silicon region and a crystallite as microcrystal, which can be regarded as single crystal, is formed on an insulation film by a plasma CVD method. Under a second condition for filling the space between the mixed phase grains by growing the mixed phase grains on the seed crystal, a microcrystalline semiconductor film is stacked on the seed crystal by a plasma CVD method. <P>COPYRIGHT: (C)2012,JPO&INPIT |
