SEMICONDUCTOR MEMORY DEVICE

摘要

This memory includes: bit lines; word lines crossing the bit lines; a memory cell array including memory cells provided to correspond to intersections between the bit lines and the word lines, respectively. A sense amplifier is connected to the bit lines and detects data stored in the memory cells. A word line driver controls a voltage of the word lines. An error-correcting unit includes a first error-correcting circuit having a first error-correcting capability and a second error-correcting circuit having a second error-correcting capability. The memory cells connected to each of the word lines in the memory cell block constitute a page. The error-correcting unit drives one of or both of the first and second error-correcting circuits during a data read operation or a data write operation according to a step count which is number of times of stepping up the voltage of the word lines during the data write operation.