发明名称 |
SELF-PROTECTED ELECTROSTATIC DISCHARGE FIELD EFFECT TRANSISTOR (SPESDFET), AN INTEGRATED CIRCUIT INCORPORATING THE SPESDFET AS AN INPUT/OUTPUT (I/O) PAD DRIVER AND ASSOCIATED METHODS OF FORMING THE SPESDFET AND THE INTEGRATED CIRCUIT |
摘要 |
Disclosed are embodiments of a self-protected electrostatic discharge field effect transistor (SPESDFET). In the SPESDFET embodiments, a resistance region is positioned laterally between two discrete sections of a deep source/drain region: a first section that is adjacent to the channel region and a second section that is contacted. The second section of the deep source/drain region is silicided, but the first section adjacent to the channel region and the resistance region are non-silicided. Additionally, the gate structure can be either silicided or non-silicided. With such a configuration, the disclosed SPESDFET provides robust ESD protection without consuming additional area and without altering the basic FET design (e.g., without increasing the distance between the deep source/drain regions and the channel region). Also disclosed are embodiments of integrated circuit that incorporates the SPESDFET as an input/output (I/O) pad driver and method embodiments for forming the SPESDFET and the integrated circuit.
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申请公布号 |
US2012146150(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US20100967114 |
申请日期 |
2010.12.14 |
申请人 |
GAUTHIER, JR. ROBERT J.;KUMAR MAHENDER;LI JUNJUN;SLISHER DUSTIN K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAUTHIER, JR. ROBERT J.;KUMAR MAHENDER;LI JUNJUN;SLISHER DUSTIN K. |
分类号 |
H01L23/62;H01L21/336 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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