发明名称 |
NANOWIRE FABRICATION METHOD AND SEMICONDUCTOR ELEMENT USING NANOWIRE FABRICATED THEREBY |
摘要 |
The present invention discloses a nanowire fabrication method and a semiconductor element using a nanowire fabricated thereby. The method of the present invention comprises steps: providing a substrate; sequentially depositing a silicon dioxide layer and a silicon nitride layer on the substrate; forming a patterned photoresist layer on the silicon nitride layer; using the patterned photoresist layer as a mask to etch the silicon nitride layer and the silicon dioxide layer with the substrate partly etched away to form a protrusion; removing the patterned photoresist layer to form an isolation layer; removing the silicon nitride and the silicon dioxide layer, sequentially depositing a dielectric layer and a polysilicon layer; and anisotropically etching the polysilicon layer to form nanowires on a region of the dielectric layer, which is around sidewalls of the protrusion.
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申请公布号 |
US2012146161(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US201113017777 |
申请日期 |
2011.01.31 |
申请人 |
LIN CHIA-YI;CHEN MIN-CHENG;CHEN HOU-YU |
发明人 |
LIN CHIA-YI;CHEN MIN-CHENG;CHEN HOU-YU |
分类号 |
H01L29/772;B82Y40/00;B82Y99/00;H01L21/283 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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