发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND RECEIVING APPARATUS
摘要 A receiving apparatus includes a first circuit to receive a radio wave of a first frequency band from a tuning circuit, a second circuit, including an amplifier to receive a radio wave of a second frequency band lower in frequency than the first frequency band, and a generating circuit to generate a tuning voltage for the tuning circuit in a first state in which the radio wave of the first frequency band is received, and a bias voltage for the amplifier in a second state in which the radio wave of the second frequency band is received. The generating circuit includes a voltage generator to generate and output the tuning voltage and the bias voltage to an output route, and a switching circuit to switch the output route to couple to the amplifier in the second state.
申请公布号 US2012148001(A1) 申请公布日期 2012.06.14
申请号 US201013391688 申请日期 2010.08.24
申请人 YASHIMA KIMINORI;MITSUMI ELECTRIC CO., LTD. 发明人 YASHIMA KIMINORI
分类号 H04B1/18;H04B7/00;H04L27/06 主分类号 H04B1/18
代理机构 代理人
主权项
地址