RUTHENIUM COMPLEX MIXTURE, COMPOSITION FOR FORMING FILM, RUTHENIUM-CONTAINING FILM, AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a ruthenium compound capable of forming a film at low temperature since thin film formation at low temperature is necessary for covering a substrate having minute steps with a ruthenium thin film by using a CVD method.

SOLUTION: A ruthenium-containing film is produced by the CVD method and the like using a ruthenium complex mixture as a raw material. The ruthenium complex mixture includes: bis(ethylcyclopentadienyl)ruthenium; and 0.1-100 wt.% of a ruthenium complex, which is thermally decomposed at 100-300°C, with respect to the bis(ethylcyclopentadienyl)ruthenium.

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