发明名称 |
Semiconductor Device and Method of Manufacture Thereof |
摘要 |
A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line. The redistribution line in the first pad area is arranged orthogonal to a first direction to a neutral point of the semiconductor device.
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申请公布号 |
US2012146231(A1) |
申请公布日期 |
2012.06.14 |
申请号 |
US20100967962 |
申请日期 |
2010.12.14 |
申请人 |
MEYER THORSTEN;HEITZER LUDWIG |
发明人 |
MEYER THORSTEN;HEITZER LUDWIG |
分类号 |
H01L23/48;H01L21/44 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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