发明名称 Semiconductor Device and Method of Manufacture Thereof
摘要 A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line. The redistribution line in the first pad area is arranged orthogonal to a first direction to a neutral point of the semiconductor device.
申请公布号 US2012146231(A1) 申请公布日期 2012.06.14
申请号 US20100967962 申请日期 2010.12.14
申请人 MEYER THORSTEN;HEITZER LUDWIG 发明人 MEYER THORSTEN;HEITZER LUDWIG
分类号 H01L23/48;H01L21/44 主分类号 H01L23/48
代理机构 代理人
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