| 摘要 |
PURPOSE: A cross-type graphene hetero-junction structure and a method for manufacturing the same are provided to artificially eliminate the electric characteristic of a graphene device by vertically joining a single layered graphene, measuring the interlayer resistance of a double-layered graphene, and inserting an atomic layer between graphenes. CONSTITUTION: A first graphene(21) is attached on a first silicon substrate(11). An electronic beam resist, polymethyl methacrylate, is coated to the first graphene and is baked on a hot plate to be glassified. The first silicon substrate coated with the polymethyl methacrylate is immersed in a potassium hydroxide aqueous solution to separate a polymethyl methacrylate layer(31) from the first silicon substrate. The separated polymethyl methacrylate layer of a cross-junction shape is aligned on a second graphene(22) which is formed on a second silicon substrate(12). The polymethyl methacrylate layer is eliminated by acetone.
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