| 摘要 |
PURPOSE: A semiconductor device which uses graphene and a manufacturing method thereof are provided to arrange a graphene layer on a pattern layer which is manufactured beforehand, thereby improving on/off current ratio and mobility. CONSTITUTION: A pattern layer(120) is formed on a substrate(110) into a predetermined shape. A graphene layer(130) is formed on the pattern layer in a predetermined direction. A passivation layer(140) is formed on the graphene layer. An electrode layer(150) is formed on a predetermined region of the graphene layer. An insulating film layer(160) is formed between the substrate and the graphene layer.
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