发明名称 |
Nonvolatile memory device, driving method thereof, and memory system having the same |
摘要 |
A nonvolatile memory device (NVM), memory system and apparatus include control logic configured to perform a method of applying negative voltage on a selected wordline of the NVM. During a first time a first high voltage level is applied to the channel of a transistor of a address decoder and a ground voltage is applied to the well of the transistor. And, during a second time a second high voltage level is applied to the channel of the transistor, and within the second time interval a first negative voltage is applied to the well of the transistor. The first high voltage level is higher than the second high voltage level, and a voltage applied on the selected wordline is negative within the second time interval. |
申请公布号 |
US8199581(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20100712813 |
申请日期 |
2010.02.25 |
申请人 |
KIM MOOSUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM MOOSUNG |
分类号 |
G11C16/06;G11C16/08;G11C16/30 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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