OXIDE SEMIXONDUCTOR THIN FILM TRANSISTOR HAVING CONTROL/FLOATING GATE ELECTRODE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: An oxide semiconductor thin film transistor including control/floating gate electrodes and a manufacturing method thereof are provided to improve the reliability of a device including an oxide semiconductor transistor by programming an operation voltage to an original state through the control/floating gate electrodes even though the operation voltage is changed. CONSTITUTION: A control gate electrode(11) is formed on a substrate(10). A first gate insulation layer(12) includes a gate electrode and is formed on the substrate. A second gate insulation layer(13) is formed on the first gate insulation layer. A floating gate electrode(14) is formed on the second gate insulation layer. A third gate electrode insulation layer(15) includes the floating gate electrode and is formed on the substrate. An oxide semiconductor layer(16) comprises an oxide semiconductor and is formed on the third gate insulation layer. Source/drain electrodes(17,18) are electrically connected to the oxide semiconductor layer.