LIGHT EMITTING DIODE HAVING AN EXCELLENT HOLE MOBILITY

摘要

PURPOSE: A light emitting diode is provided to improve the hole mobility and dispersion of a p type semiconductor layer by including graphene on the p type semiconductor layer or between an active layer and the p type semiconductor layer. CONSTITUTION: An n type semiconductor layer(170) is formed on a substrate. An active layer(140) is formed on the n type semiconductor layer. A p type semiconductor layer(160) is formed on the active layer. An electron barrier layer(110) is formed between the active layer and the p type semiconductor layer. Graphene(151) is formed between the active layer and the p type semiconductor layer.