发明名称 |
Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the same |
摘要 |
One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced. |
申请公布号 |
US8200167(B2) |
申请公布日期 |
2012.06.12 |
申请号 |
US20070513280 |
申请日期 |
2007.11.08 |
申请人 |
KOYA SHIGEKI;TAKATANI SHINICHIRO;OGAWA TAKASHI;NAKAJIMA AKISHIGE;SHIGENO YASUSHI;RENESAS ELECTRONICS CORPORATION |
发明人 |
KOYA SHIGEKI;TAKATANI SHINICHIRO;OGAWA TAKASHI;NAKAJIMA AKISHIGE;SHIGENO YASUSHI |
分类号 |
H04B1/44 |
主分类号 |
H04B1/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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